BZV49-C3Y3 by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BZV49-C3Y3
Description	ZENER DIODE; Terminal Position: SINGLE; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	BZV49-C3Y3 Datasheet
In Stock	973

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Working Test Current:	5 mA
Config:	SINGLE
Diode Type:	ZENER DIODE
JEDEC-95 Code:	TO-243AA
Surface Mount:	YES
Maximum Voltage Tolerance:	5 %
Diode Element Material:	SILICON
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Technology:	ZENER
JESD-30 Code:	R-PSSO-F3
Nominal Reference Voltage:	3.3 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	1 W
Terminal Form:	FLAT
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Case Connection:	CATHODE

Pricing (USD)

Qty.	Unit Price	Ext. Price
973	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.