NXP Semiconductors - J113AMO

J113AMO by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number J113AMO
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
Datasheet J113AMO Datasheet
In Stock4,219
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .4 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 100 ohm
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