NXP Semiconductors - LBE2003S

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LBE2003S by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LBE2003S
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Collector Current (IC): .09 A; Transistor Application: AMPLIFIER;
Datasheet LBE2003S Datasheet
In Stock1,192
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .09 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
Maximum Power Dissipation Ambient: 1.4 W
Minimum Power Gain (Gp): 10 dB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 15
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Additional Features: HIGH RELIABILITY, DIFFUSED BALLAST RESISTORS
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