NXP Semiconductors - LTE42005STRAY

BLV947 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 200W, operates at ultra-high frequencies, and supports surface mount with a rectangular ceramic package. Ideal for high-performance RF circuits.

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

STMicroelectronics' AM2931-110 is an NPN BJT transistor for switching applications. It offers a min power gain of 6.2 dB and can handle up to 375 W power dissipation. With a max collector current of 12 A, it is ideal for S Band frequency band applications.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 525 MHz; Maximum Collector Current (IC): .9 A; No. of Elements: 1;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Terminal Finish: GOLD;

The Toshiba 2SC2879A is a NPN RF Power BJT with a max power dissipation of 250W, ideal for amplifier applications in the high-frequency band. It has a max collector-emitter voltage of 18V, collector current of 25A, and min DC current gain of 10. This transistor comes in a ceramic-metal-sealed co-fired package with flange mount style and radial terminal position.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: BASE; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 2; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 12 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Minimum Power Gain (Gp): 12 dB; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 9 A;

SD1488 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, operating at 150 °C. It has a max power dissipation of 145W and can handle a collector current of 8A. Ideal for ultra-high frequency band amplification applications in surface mount configurations.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Minimum Power Gain (Gp): 8.5 dB; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

SD1446 by STMicroelectronics is an NPN RF Power BJT with a max collector-emitter voltage of 18V and a max collector current of 12A. It is designed for ultra-high frequency band applications, featuring a plastic/epoxy package body material and radial terminal position. Ideal for amplifier circuits in the UHF band, this transistor has a single configuration with 4 terminals in a round flange mount package style.

Microsemi's 2005 is a NPN RF Power BJT with CERAMIC, METAL-SEALED COFIRED package. It operates in L BAND with max IC of 1 A, suitable for amplifier applications. This single configuration transistor has flat terminals and can withstand up to 200 °C operating temperature.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 16 V; Terminal Position: DUAL;