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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MBC13900T1 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15000 MHz; Maximum Power Dissipation (Abs): .188 W; Maximum Collector Current (IC): .02 A; |
| Datasheet | MBC13900T1 Datasheet |
| In Stock | 1,078 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 17.5 dB |
| Nominal Transition Frequency (fT): | 15000 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .02 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 100 |
| Minimum Operating Temperature: | -40 Cel |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | .188 W |
| Maximum Collector-Emitter Voltage: | 6.5 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 85 Cel |
| Case Connection: | EMITTER |
