NXP Semiconductors - MHT1000HR5

  1. Home
  2. NXP Semiconductors - MHT1000HR5
MHT1000HR5 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHT1000HR5
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet MHT1000HR5 Datasheet
In Stock709
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
709 $144.480 $102,436.320

Popular Products

Category Top Products

SD2932W by STMicroelectronics

SD2932W

STMicroelectronics

SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.
FLL57MK by Sumitomo Electric Device Innovations Usa

FLL57MK

Sumitomo Electric Device Innovations Usa

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Operating Mode: DEPLETION MODE; Additional Features: HIGH RELIABILITY;
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
PTFA092201EV4R250XTMA1 by Infineon Technologies

PTFA092201EV4R250XTMA1

Infineon Technologies

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934065908118 by NXP Semiconductors

934065908118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
RF2L36040CF2 by STMicroelectronics

RF2L36040CF2

STMicroelectronics

RF Power Field-Effect Transistors;
PD55025-E by STMicroelectronics

PD55025-E

STMicroelectronics

STMicroelectronics PD55025-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 79W Power Dissipation. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
A3G20S250-01SR3 by NXP Semiconductors

A3G20S250-01SR3

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;
PD54008-E-E by STMicroelectronics

PD54008-E-E

STMicroelectronics

PD54008-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
MW6S004NT1 by NXP Semiconductors

MW6S004NT1

NXP Semiconductors

The NXP Semiconductors MW6S004NT1 is a single N-channel RF Power FET with a 68V DS breakdown voltage. It operates in enhancement mode, suitable for amplifier applications in the L band. This transistor features a small outline package, metal-oxide semiconductor technology, and can withstand temperatures up to 150°C.
VRF2933MP by Microsemi

VRF2933MP

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
935442486528 by NXP Semiconductors

935442486528

NXP Semiconductors

RF Power Field-Effect Transistors;
BLF175,112 by NXP Semiconductors

BLF175,112

NXP Semiconductors

NXP Semiconductors' BLF175,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifiers in the VHF band, it operates in Enhancement Mode with a max power dissipation of 68W. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in very high frequency applications.
AFT09S220-02NR3 by NXP Semiconductors

AFT09S220-02NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Terminal Finish: Tin (Sn); JESD-609 Code: e3;
MRF6522-70 by Motorola

MRF6522-70

Motorola

MRF6522-70 by Motorola is an N-channel RF Power FET with 65V DS breakdown voltage, suitable for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 7A and can withstand temperatures up to 200°C. The transistor features a ceramic-metal sealed co-fired package and is designed for surface mount installation.
SD57030-01 by STMicroelectronics

SD57030-01

STMicroelectronics

SD57030-01 by STMicroelectronics is an N-channel RF Power FET with a 65V DS breakdown voltage and 4A max drain current. It operates in the ultra-high frequency band, suitable for amplifier applications. This enhancement mode transistor has a max power dissipation of 74W and can withstand temperatures up to 200°C.
STAP57030 by STMicroelectronics

STAP57030

STMicroelectronics

STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
IXZ210N50L by IXYS Corporation

IXZ210N50L

IXYS Corporation

IXZ210N50L by IXYS is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for amplifier applications. Operating in enhancement mode, it offers 10A max drain current and can handle up to 175°C temperature. This RF transistor has a small outline package style and is suitable for very high frequency band usage.
PD57030 by STMicroelectronics

PD57030

STMicroelectronics

PD57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
MRF1K50HR5 by NXP Semiconductors

MRF1K50HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;