NXP Semiconductors - MHW10276N

  1. Home
  2. NXP Semiconductors - MHW10276N
MHW10276N by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHW10276N
Description WIDE BAND HIGH POWER; Gain: 27 dB; Characteristic Impedance: 75 ohm; Minimum Operating Temperature: -20 Cel; Construction: MODULE; Maximum Operating Frequency: 1000 MHz;
Datasheet MHW10276N Datasheet
In Stock2,271
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Characteristic Impedance: 75 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 27 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,271 - -

Popular Products

Category Top Products

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.
HMC455LP3 by Analog Devices

HMC455LP3

Analog Devices

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.
MGA-86576-STR by Broadcom

MGA-86576-STR

Broadcom

Broadcom's MGA-86576-STR is a wide band low power RF amplifier with 20 dB gain, operating from 1500 MHz to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, making it ideal for applications requiring high frequency amplification in RF & microwave systems.
ECG008B-G by Qorvo

ECG008B-G

Qorvo

Qorvo's ECG008B-G is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 15 dBm CW input power. Ideal for applications requiring high performance in RF & microwave systems.
HMC907A by Analog Devices

HMC907A

Analog Devices

HMC907A by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12.5 dB gain. Ideal for wide band medium power applications, it operates from -55°C to 85°C within the frequency range of 200 MHz to 22 GHz.
HMC532LP4E by Hittite Microwave

HMC532LP4E

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.
BGA6130,118 by NXP Semiconductors

BGA6130,118

NXP Semiconductors

NXP Semiconductors' BGA6130,118 is an RF & Microwave Amplifier with 3.6V power supply, 8 terminals, and 250mA max supply current. It features a plastic/epoxy package body material and nickel palladium gold terminal finish. Ideal for surface mount applications in various electronic devices.
HMC409LP4ETR by Hittite Microwave

HMC409LP4ETR

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;
MGA-62563-BLKG by Agilent Technologies

MGA-62563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3/5;
AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.
PMA3-83LNW+ by Mini-circuits

PMA3-83LNW+

Mini-circuits

PMA3-83LNW+ by Mini-circuits is a wide band low power RF amplifier with a gain of 16.9 dB. It operates at frequencies ranging from 400 MHz to 8000 MHz and has a max input power of 16 dBm. This amplifier is commonly used in applications requiring amplification in the RF and microwave range.
MGA-565P8-BLK by Broadcom

MGA-565P8-BLK

Broadcom

Broadcom's MGA-565P8-BLK is a wide band low power RF amplifier with 20 dB gain, handling up to 15 dBm CW input power. It operates from 0-3500 MHz, featuring a VSWR of 2. Ideal for RF & microwave applications due to its high performance and matte tin finish.
RF6886SR by Rf Micro Devices

RF6886SR

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;
HMC8411LP2FETR by Analog Devices

HMC8411LP2FETR

Analog Devices

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
TQL9063 by Qorvo

TQL9063

Qorvo

TQL9063 by Qorvo is a wide band medium power RF amplifier with 17.5 dB gain, operating from 500 MHz to 4000 MHz. It has a max input power of 22 dBm and VSWR of 2.01, suitable for surface mount applications in RF & microwave systems.
HMC478MP86E by Analog Devices

HMC478MP86E

Analog Devices

Analog Devices' HMC478MP86E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handles up to 5 dBm input power, and has a compact surface mount package ideal for RF applications in temperatures ranging from -40 to 85°C.
ADL8111ACCZN by Analog Devices

ADL8111ACCZN

Analog Devices

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
M57710-A by Mitsubishi Electric

M57710-A

Mitsubishi Electric

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.