NXP Semiconductors - MHW1244N

  1. Home
  2. NXP Semiconductors - MHW1244N
MHW1244N by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHW1244N
Description WIDE BAND HIGH POWER; Maximum Operating Frequency: 200 MHz; Construction: MODULE; Characteristic Impedance: 75 ohm; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 100 Cel;
Datasheet MHW1244N Datasheet
In Stock1,654
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 5 MHz
Characteristic Impedance: 75 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 200 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 24 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,654 - -

Popular Products

Category Top Products

MAX2373ETC+T by Analog Devices

MAX2373ETC+T

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn) - annealed;
MGA-86576-TR1 by Hewlett Packard

MGA-86576-TR1

Hewlett Packard

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2.5; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 8000 MHz; Construction: COMPONENT; Gain: 20 dB;
GRF2013 by Guerrilla Rf

GRF2013

Guerrilla Rf

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.
HMC311SC70ETR by Hittite Microwave

HMC311SC70ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;
TQP3M9018 by Qorvo

TQP3M9018

Qorvo

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.
MGA-85563-BLKG by Agilent Technologies

MGA-85563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;
MGA-81563-BLK by Broadcom

MGA-81563-BLK

Broadcom

Broadcom's MGA-81563-BLK is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features surface mounting and requires a 3V power supply with a max current draw of 51 mA.
HMC478ST89E by Analog Devices

HMC478ST89E

Analog Devices

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
BGU7004,115 by NXP Semiconductors

BGU7004,115

NXP Semiconductors

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.
HMC6981LS6 by Analog Devices

HMC6981LS6

Analog Devices

Analog Devices' HMC6981LS6 is a wide band high power RF amplifier with 23 dB gain, operating from 15-20 GHz. It has a max input power of 18 dBm and operates on a 5.5V supply, drawing up to 1100 mA. Ideal for applications requiring high power amplification in the RF & Microwave domain.
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
MGA-72543-TR1 by Agilent Technologies

MGA-72543-TR1

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;
MGA-82563-TR1 by Broadcom

MGA-82563-TR1

Broadcom

Broadcom's MGA-82563-TR1 is a GAAS RF amplifier with 12dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications. The component features a plastic/epoxy package body, surface mounting feature, and operates b/w -40°C to 85°C.
MMZ25332BT1 by Freescale Semiconductor

MMZ25332BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;
MMG15241HT1 by NXP Semiconductors

MMG15241HT1

NXP Semiconductors

The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.
HMC441LH5TR by Hittite Microwave

HMC441LH5TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC634LC4TR by Analog Devices

HMC634LC4TR

Analog Devices

HMC634LC4TR by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5V supply. It has a frequency range of 5-20 GHz, ideal for RF and microwave applications. With ceramic packaging and surface mounting feature, it offers high performance in temperatures ranging from -40 to 85°C.
MGA-545P8-TR1G by Agilent Technologies

MGA-545P8-TR1G

Agilent Technologies

Agilent Technologies' MGA-545P8-TR1G is a wide band medium power RF amplifier with 10.5 dB gain, operating from 50 MHz to 7000 MHz. It can handle up to 20 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring high frequency amplification in component construction.
RA07H4047M-101 by Mitsubishi Electric

RA07H4047M-101

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.