NXP Semiconductors - MHW8182B

Broadcom's MGA-82563-TR1 is a GAAS RF amplifier with 12dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications. The component features a plastic/epoxy package body, surface mounting feature, and operates b/w -40°C to 85°C.

WIDE BAND HIGH POWER;

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND HIGH POWER;

HMC3653LP3BE by Analog Devices is a wide band low power RF amplifier with a gain of 12 dB. It operates b/w 7-15 GHz, handling up to 12 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;

NARROW BAND HIGH POWER;

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;

ADL9005ACPZN by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 10 MHz to 26500 MHz. It has a max input power of 22 dBm and VSWR of 1.49, suitable for RF & microwave applications requiring high performance amplification in plastic/epoxy package.

Analog Devices' HMC1082LP4ETR is a GaAs technology RF amplifier with 24 terminals, operating b/w -40°C to 85°C. It has a power supply of 5V and is designed for wideband medium-power applications in RF and microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting features.

Broadcom's MSA-1105-TR1G is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. The component features surface mounting and operates at a supply voltage of 5.5V with a current draw of 70mA.

Analog Devices' HMC505LP4 is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a VSWR of 2, operates at frequencies b/w 6800-7400 MHz, and has a characteristic impedance of 50Ω. Ideal for narrowband low-power applications requiring surface mount technology.