NXP Semiconductors - MHW8185LR

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

The Mini-circuits PMA3-83LN+ is a wide band low power RF amplifier with a gain of 19.9 dB, suitable for frequencies ranging from 500 MHz to 8000 MHz. It can handle a max input power of 16 dBm and operates in temperatures from -40°C to 105°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC871LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20000 MHz, handling up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

LT5524EFE#PBF by Analog Devices is a wide band low power RF amplifier with 50 ohm impedance, 4.5 dB gain, and 540 MHz max frequency. Ideal for applications requiring amplification in RF and microwave circuits operating b/w -40°C to 85°C.

Analog Devices' MAX2630EUS+T is a wide band low power RF amplifier with 11dB gain, operating b/w 800-1000MHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for surface mount applications in RF & microwave systems. With a compact package and low supply current of 11mA at 3V, it's ideal for high-frequency signal amplification.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

MAAM-011112-000000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates from 20 to 37 GHz, suitable for microwave applications. With a max input power of 0 dBm, it has a compact surface mount package ideal for high frequency systems.

Broadcom's MGA-631P8-BLKG is a GAAS RF amplifier with 16dB gain, operating from 400MHz to 1500MHz. It has a max input power of 20dBm and uses a 4V power supply. Ideal for wideband low-power applications, this component features surface mounting and a characteristic impedance of 50Ω.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

SKY67151-396LF by Skyworks Solutions is a wide band low power RF amplifier with 14.5 dB gain and 21 dBm CW input power. Operating from 700 MHz to 3800 MHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 105°C.

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.

The NXP Semiconductors BGU6101,147 is a wide band low power RF amplifier with 4dB gain. It operates b/w 40MHz to 4000MHz, suitable for various RF and microwave applications. With a max supply current of 10mA and operating temperature range from -40°C to 85°C, it is ideal for surface mount installations.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Screening Level: IEC-61249-2-21;

Analog Devices' HMC441LP3E is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handling up to 15 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to +85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 150 mA;