NXP Semiconductors - MMG20271HT1

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 470 MHz;

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

Qorvo's RF3827 is a wide band medium power amplifier with 20dB gain, operating from 5MHz to 1500MHz. It has a max input power of 13dBm and VSWR of 20, suitable for RF applications requiring up to 8V supply voltage. The component is constructed using GaAs technology in a plastic/epoxy package, ideal for surface mounting in various RF and microwave systems.

Broadcom's MGA-86576-STRG is a ceramic RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications requiring a characteristic impedance of 50Ω.

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;

SGA-3463Z by Sirenza Microdevices is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Analog Devices' HMC374ETR is a wide band medium power RF amplifier with 6dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 5V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

Qorvo's CMD264P3 is a wide band low power RF amplifier with 18 dB gain, operating from 6-18 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

Mini-circuits LEE-39 is a wide band low power RF amplifier with 18.5 dB gain, handling up to 13 dBm CW input power. Featuring a VSWR of 1.6, it operates from -40°C to 85°C, making it ideal for various RF and microwave applications up to 8 GHz.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

WIDE BAND HIGH POWER;

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.