NXP Semiconductors - MMG2401NR2

  1. Home
  2. NXP Semiconductors - MMG2401NR2
MMG2401NR2 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MMG2401NR2
Description NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); No. of Functions: 1;
Datasheet MMG2401NR2 Datasheet
In Stock955
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 2400 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 12
Package Equivalence Code: LCC12,.12SQ,20
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2500 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 26 dB
Power Supplies (V): 3.3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
955 - -

Popular Products

Category Top Products

AD8353ACPZ-REEL7 by Analog Devices

AD8353ACPZ-REEL7

Analog Devices

AD8353ACPZ-REEL7 by Analog Devices is a wide band low power RF amplifier with 15.6 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on a 5V supply, making it suitable for RF and microwave applications requiring high performance in a compact package.
HMC441LH5TR by Hittite Microwave

HMC441LH5TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
TGA2578-CP by Triquint Semiconductor

TGA2578-CP

Triquint Semiconductor

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Supply Current: 400 mA; Maximum Voltage Standing Wave Ratio: 10;
HMC499LC4TR by Analog Devices

HMC499LC4TR

Analog Devices

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.
HMC429LP4ETR by Hittite Microwave

HMC429LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 5000 MHz;
BGU8009 by NXP Semiconductors

BGU8009

NXP Semiconductors

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.
HMC478MP86ETR by Hittite Microwave

HMC478MP86ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
HMC463LP5E by Hittite Microwave

HMC463LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;
AMMP-6220 by Agilent Technologies

AMMP-6220

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 20000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 6000 MHz; Construction: COMPONENT; Gain: 18 dB;
SGA-3363 by Sirenza Microdevices

SGA-3363

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
MGA-545P8-TR1 by Broadcom

MGA-545P8-TR1

Broadcom

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.
GALI-39 by Mini-circuits

GALI-39

Mini-circuits

GALI-39 by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain, operating from 0 to 7000 MHz. It has a max input power of 13 dBm and VSWR of 2.3, suitable for RF & microwave applications requiring surface mount construction.
MGA-30689-BLKG by Broadcom

MGA-30689-BLKG

Broadcom

Broadcom's MGA-30689-BLKG is a GAAS RF amplifier with 13.7 dB gain, operating from 40 MHz to 3000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems.
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
BGU7004,115 by NXP Semiconductors

BGU7004,115

NXP Semiconductors

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.
HMC902LP3E by Hittite Microwave

HMC902LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
SGA-3363 by Rf Micro Devices

SGA-3363

Rf Micro Devices

SGA-3363 by RF Micro Devices is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, has a max input power of 18 dBm, and requires a 2.6V power supply. This component is ideal for applications requiring high-frequency signal amplification in compact electronic devices.
BGA427H6327XTSA1 by Infineon Technologies

BGA427H6327XTSA1

Infineon Technologies

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
HMC606LC5TR by Analog Devices

HMC606LC5TR

Analog Devices

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.