NXP Semiconductors - MML25231HT1

  1. Home
  2. NXP Semiconductors - MML25231HT1
MML25231HT1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MML25231HT1
Description WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;
Datasheet MML25231HT1 Datasheet
In Stock1,897
NAME DESCRIPTION
Other Names: 935318587147
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1000 MHz
Maximum Supply Current: 65 mA
Terminal Finish: TIN
JESD-609 Code: e3
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 8
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: SOLCC8,.08,20
Technology: E-PHEMT
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 4000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 14.2 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,897 $3.560 $6,753.320

Popular Products

Category Top Products

NPA1006A-TR0500 by M/a-com Technology Solutions

NPA1006A-TR0500

M/a-com Technology Solutions

NPA1006A-TR0500 by M/a-com: RF amplifier with 12.5dB gain, 20-1000MHz frequency range, and 50 ohm impedance. Ideal for wideband high-power applications in temperatures from -40 to 85°C. Package material is plastic/epoxy, suitable for surface mount installation with 8 terminals.
HMC532LP4E by Hittite Microwave

HMC532LP4E

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;
MGA-72543-TR2G by Broadcom

MGA-72543-TR2G

Broadcom

Broadcom's MGA-72543-TR2G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.
MMZ09332BT1 by NXP Semiconductors

MMZ09332BT1

NXP Semiconductors

NXP Semiconductors' MMZ09332BT1 is a narrow band medium power RF amplifier with 28.7 dB gain and 29 dBm max input power. Operating from 130 MHz to 1000 MHz, it's ideal for applications requiring high-frequency amplification in RF and microwave systems.
HMC8413LP2FETR by Analog Devices

HMC8413LP2FETR

Analog Devices

HMC8413LP2FETR by Analog Devices is a wide band medium power RF amplifier with 17 dB gain, suitable for frequencies ranging from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, making it ideal for RF and microwave applications requiring high performance amplification in the temperature range of -40°C to 85°C.
HMC634LC4TR by Hittite Microwave

HMC634LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Frequency: 5000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;
SST12CP11-QVCE by Microchip Technology

SST12CP11-QVCE

Microchip Technology

SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.
SPF5122ZSR by Qorvo

SPF5122ZSR

Qorvo

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.
BGA427H6327XTSA1 by Infineon Technologies

BGA427H6327XTSA1

Infineon Technologies

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.
MGA-61563-TR2G by Agilent Technologies

MGA-61563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 48 mA;
TRF37D73IDSGT by Texas Instruments

TRF37D73IDSGT

Texas Instruments

TRF37D73IDSGT by Texas Instruments is a wide band low power RF amplifier with 20dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply with a current draw of 65mA. Ideal for applications requiring high frequency amplification in compact designs.
MMG3H21NT1 by Freescale Semiconductor

MMG3H21NT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;
HMC463LP5ETR by Hittite Microwave

HMC463LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;
MMG20241HT1 by Freescale Semiconductor

MMG20241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
HMC441LP3 by Analog Devices

HMC441LP3

Analog Devices

HMC441LP3 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. Operating from 6.5 GHz to 13.5 GHz, it has a max input power of 15 dBm and requires a 5V supply at 115 mA. Ideal for applications requiring high frequency amplification in RF and microwave systems.
MGA-81563 by Broadcom

MGA-81563

Broadcom

Broadcom's MGA-81563 is a GAAS RF amplifier with 6 terminals, operating from -40°C to 85°C. It requires 3V power supply, draws max 51mA current, and has a surface mount package. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
MGA-86576-STR by Broadcom

MGA-86576-STR

Broadcom

Broadcom's MGA-86576-STR is a wide band low power RF amplifier with 20 dB gain, operating from 1500 MHz to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, making it ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC6981LS6TR by Analog Devices

HMC6981LS6TR

Analog Devices

Analog Devices' HMC6981LS6TR is a GaAs RF amplifier with 16 terminals, operating at 6V. With wideband high power capability, it has a ceramic package and can withstand temperatures from -40°C to 85°C. Ideal for surface mount applications in RF and microwave systems.
HMC636ST89TR by Hittite Microwave

HMC636ST89TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;
HMC478ST89ETR by Hittite Microwave

HMC478ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;