NXP Semiconductors - MMRF1020-04NR3

LET9045 by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 9 A and breakdown voltage of 80 V. It operates in the ultra-high frequency band with a power dissipation of up to 79 W. This compact surface mount device ensures efficient performance in demanding environments.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Reference Standard: IEC-60134; Highest Frequency Band: S BAND;

The NXP Semiconductors BLF6G27S-45 is an RF Power FET with a 65V DS breakdown voltage and 20A drain current. It operates in enhancement mode, suitable for S band applications like amplifiers. The package is ceramic-metal sealed co-fired, flatpack style with dual terminals and a max temperature of 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

STAP57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.

PD54003-01 by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a 25V min breakdown voltage, 4A max drain current, and operates in enhancement mode. This compact chip carrier design ensures efficient performance in demanding environments.

STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;

Mitsubishi Electric's MGF2430A-01 is an N-channel RF Power FET with a single configuration for amplifier applications. Operating in depletion mode, it offers a min power gain of 5.5 dB and can handle up to 0.8 A drain current at a max dissipation of 5 W. Ideal for Ku band frequencies, this transistor features a ceramic-metal-sealed co-fired package body and flat terminal form for surface mount applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-CDFP-F2; Terminal Form: FLAT;

NXP Semiconductors' AFT27S006NT1 is a single N-channel RF Power FET with 21 dB min power gain, operating in the ultra-high frequency band. This enhancement mode transistor has a max power dissipation of 1.5W and operates b/w -40 to 150°C. It is commonly used in applications requiring high-frequency signal amplification and transmission.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Position: DUAL; No. of Terminals: 2;

IXZ210N50L by IXYS is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for amplifier applications. Operating in enhancement mode, it offers 10A max drain current and can handle up to 175°C temperature. This RF transistor has a small outline package style and is suitable for very high frequency band usage.

RF Power Field-Effect Transistors;

SD56120M by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 236 W.

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; JESD-30 Code: R-CDFP-F2; Operating Mode: DEPLETION MODE;