MRF1517T1 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MRF1517T1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PQSO-F3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Datasheet	MRF1517T1 Datasheet
In Stock	4,235

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	4 A
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Terminal Position:	QUAD
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PQSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	1
Minimum Power Gain (Gp):	10 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	25 V
Maximum Drain Current (Abs) (ID):	4 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,235	-	-

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

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BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.