NXP Semiconductors - MRF1535FT1

MRF1535FT1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF1535FT1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
Datasheet MRF1535FT1 Datasheet
In Stock767
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 6 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 6
Maximum Power Dissipation (Abs): 135 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 175 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-272
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 6 A
Peak Reflow Temperature (C): 260
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