NXP Semiconductors - MRF18060ALR3

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MRF18060ALR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF18060ALR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet MRF18060ALR3 Datasheet
In Stock1,753
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: GOLD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 180 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: HIGH EFFICIENCY
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