NXP Semiconductors - MRF24G300HS

  1. Home
  2. NXP Semiconductors - MRF24G300HS
MRF24G300HS by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF24G300HS
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 14.9 dB; Terminal Form: FLAT; No. of Terminals: 4;
Datasheet MRF24G300HS Datasheet
In Stock268
NAME DESCRIPTION
Minimum Power Gain (Gp): 14.9 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
268 - -

Popular Products

Category Top Products

TSD2903 by STMicroelectronics

TSD2903

STMicroelectronics

TSD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 3.9A, making it ideal for amplifier applications in enhancement mode.
AFT05MS031GNR1 by NXP Semiconductors

AFT05MS031GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
LET20030C by STMicroelectronics

LET20030C

STMicroelectronics

LET20030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the L band. This surface-mount transistor supports high efficiency with a max temp of 200 °C.
MRFE6VP61K25HR6 by NXP Semiconductors

MRFE6VP61K25HR6

NXP Semiconductors

NXP Semiconductors' MRFE6VP61K25HR6 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features a Common Source configuration, 1300W Max Power Dissipation, and is ideal for AMPLIFIER applications. This CERAMIC/METAL-SEALED COFIRED transistor has a RECTANGULAR package shape and operates in ENHANCEMENT MODE at up to 225°C.
STAC1214-350 by STMicroelectronics

STAC1214-350

STMicroelectronics

RF Power Field-Effect Transistors;
PD55003S-E by STMicroelectronics

PD55003S-E

STMicroelectronics

STMicroelectronics PD55003S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND. This SINGLE configuration transistor comes in a PLASTIC/EPOXY package with Matte Tin finish, suitable for surface mount assembly.
MRFX1K80NR5 by NXP Semiconductors

MRFX1K80NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
STAC2942F by STMicroelectronics

STAC2942F

STMicroelectronics

STAC2942F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and operates in the very high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
RF5L051K0CB4 by STMicroelectronics

RF5L051K0CB4

STMicroelectronics

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;
GS66508T-TR by Gan Systems

GS66508T-TR

Gan Systems

GS66508T-TR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at -55 to 150°C. Utilizing GALLIUM NITRIDE technology, it handles up to 30A ID in VERY HIGH FREQUENCY BAND operations.
MRFE6VP61K25HR6 by Freescale Semiconductor

MRFE6VP61K25HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 4;
MRFE6VP5150GNR1 by NXP Semiconductors

MRFE6VP5150GNR1

NXP Semiconductors

NXP Semiconductors' MRFE6VP5150GNR1 is an N-CHANNEL RF Power FET with 133V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The transistor has a PLASTIC/EPOXY package and GULL WING terminals, suitable for surface mount assembly.
934064592118 by NXP Semiconductors

934064592118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
CGH31240F by Wolfspeed

CGH31240F

Wolfspeed

CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
PD84008L-E by STMicroelectronics

PD84008L-E

STMicroelectronics

PD84008L-E by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates at up to 150 °C. This surface-mount transistor ensures efficient performance in compact designs.
BLF246B,112 by NXP Semiconductors

BLF246B,112

NXP Semiconductors

NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.
934065972112 by NXP Semiconductors

934065972112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Transistor Application: AMPLIFIER;
MRF137 by M/a-com Technology Solutions

MRF137

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
934065232118 by NXP Semiconductors

934065232118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Package Style (Meter): FLATPACK;
BLF6G15L-250PBRN by NXP Semiconductors

BLF6G15L-250PBRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;