NXP Semiconductors - MRF5S19130HR3

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MRF5S19130HR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF5S19130HR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 438 W; No. of Terminals: 2; Minimum DS Breakdown Voltage: 65 V;
Datasheet MRF5S19130HR3 Datasheet
In Stock1,275
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT APPLICABLE
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 438 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT APPLICABLE
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Pricing (USD)

Qty. Unit Price Ext. Price
1,275 $113.220 $144,355.500

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