NXP Semiconductors - MRF6V2010NBR1

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MRF6V2010NBR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF6V2010NBR1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;
Datasheet MRF6V2010NBR1 Datasheet
In Stock1,167
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 3
JEDEC-95 Code: TO-272
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 110 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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