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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MRF8VP13350GNR3 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 17.5 dB; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | MRF8VP13350GNR3 Datasheet |
| In Stock | 3,828 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SEPARATE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 3 |
| Minimum Power Gain (Gp): | 17.5 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Peak Reflow Temperature (C): | 260 |
