NXP Semiconductors - MRF9060LR1

  1. Home
  2. NXP Semiconductors - MRF9060LR1
MRF9060LR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF9060LR1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE; Transistor Application: AMPLIFIER;
Datasheet MRF9060LR1 Datasheet
In Stock4,836
NAME DESCRIPTION
Minimum Power Gain (Gp): 16 dB
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): 2 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,836 $19.460 $94,108.560

Popular Products

Category Top Products

AFT20P060-4NR3 by NXP Semiconductors

AFT20P060-4NR3

NXP Semiconductors

NXP Semiconductors' AFT20P060-4NR3 is an N-CHANNEL RF Power FET with a max operating temperature of 225°C. It features METAL-OXIDE SEMICONDUCTOR technology and a SINGLE configuration, making it ideal for high-power RF applications in various industries.
MRF151 by New Jersey Semiconductor Products

MRF151

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain-Source On Resistance: .5 ohm;
PD55003-01 by STMicroelectronics

PD55003-01

STMicroelectronics

PD55003-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 40V min breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 2.5A. Ideal for compact surface mount designs, it excels in high-temperature environments up to 150 °C.
AFT09H310-03SR6 by NXP Semiconductors

AFT09H310-03SR6

NXP Semiconductors

NXP Semiconductors' AFT09H310-03SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-frequency applications in various industries.
MMRF5300NR5 by NXP Semiconductors

MMRF5300NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
934065978112 by NXP Semiconductors

934065978112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
MRF6V12250HR3 by Freescale Semiconductor

MRF6V12250HR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 2; Minimum DS Breakdown Voltage: 110 V;
TSD2904 by STMicroelectronics

TSD2904

STMicroelectronics

TSD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 7A, making it ideal for amplifier applications. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures up to 200 °C.
934056520112 by NXP Semiconductors

934056520112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MRF137 by Asi Semiconductor

MRF137

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (Abs) (ID): 5 A; Terminal Form: FLAT;
MRF1518NT1 by NXP Semiconductors

MRF1518NT1

NXP Semiconductors

NXP Semiconductors' MRF1518NT1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with 40V DS breakdown voltage and 4A drain current. With a max power dissipation of 62.5W, it is designed for ultra-high frequency band usage.
MRF7P20040HSR3 by Freescale Semiconductor

MRF7P20040HSR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
MRF6V12500HSR5 by NXP Semiconductors

MRF6V12500HSR5

NXP Semiconductors

NXP Semiconductors' MRF6V12500HSR5 is a single N-channel RF Power FET with 110V DS breakdown voltage, ideal for amplifier applications in L band. Featuring metal-oxide semiconductor technology, it operates at up to 225°C and has a peak reflow temperature of 260°C.
MRF9045 by Motorola

MRF9045

Motorola

MRF9045 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, suitable for amplifier applications. With a max power dissipation of 125W and operating temperature up to 200°C, it features a ceramic-metal-sealed co-fired package ideal for flange mount installations.
AFG24S100H by NXP Semiconductors

AFG24S100H

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
MMRF1015GNR1 by NXP Semiconductors

MMRF1015GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
A2T26H300-24SR6 by NXP Semiconductors

A2T26H300-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
CGHV40030F by Wolfspeed

CGHV40030F

Wolfspeed

CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.
A2T18H450W19SR6 by NXP Semiconductors

A2T18H450W19SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
RF2L16080CF2 by STMicroelectronics

RF2L16080CF2

STMicroelectronics

RF Power Field-Effect Transistors;