NXP Semiconductors - MRF9100LSR3

  1. Home
  2. NXP Semiconductors - MRF9100LSR3
MRF9100LSR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF9100LSR3
Description RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MRF9100LSR3 Datasheet
In Stock3,312
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,312 - -

Popular Products

Category Top Products

SD1135 by STMicroelectronics

SD1135

STMicroelectronics

SD1135 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, operating in the ultra-high frequency band up to 470 MHz. It has a max power dissipation of 15W and can handle a collector current of 2A. Ideal for amplifier applications, this transistor offers a min DC current gain of 20 and operates at temperatures up to 175 °C.
TSD4575 by STMicroelectronics

TSD4575

STMicroelectronics

TSD4575 by STMicroelectronics is an NPN RF Power BJT with a max collector current of 0.2A, suitable for amplifier applications in the ultra-high frequency band. It features a ceramic and metal-sealed co-fired package body material, surface mount capability, and a rectangular package shape with flange mount style.
RZB06050W by NXP Semiconductors

RZB06050W

NXP Semiconductors

RZB06050W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a nominal transition frequency of 540 MHz, and operates at temperatures up to 200 °C. Its ceramic, metal-sealed package ensures reliability in ultra-high frequency settings.
933994040114 by NXP Semiconductors

933994040114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 2; Qualification: Not Qualified;
SD1530-01 by STMicroelectronics

SD1530-01

STMicroelectronics

SD1530-01 by STMicroelectronics is an NPN RF BJT transistor for switching applications. With a max power dissipation of 87.5W, it operates in L Band frequencies and handles a max collector current of 2.6A. This single configuration transistor comes in a round plastic package suitable for surface mount applications at temperatures up to 200 °C.
BLW84 by NXP Semiconductors

BLW84

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 10;
SD4011 by STMicroelectronics

SD4011

STMicroelectronics

SD4011 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals and max power dissipation of 31.8W. Ideal for ultra high frequency band amplification applications, it has a max collector-emitter voltage of 20V and operates at up to 200 °C.
NESG270034-T1-AZ by Renesas Electronics

NESG270034-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): .75 A; Terminal Position: SINGLE;
SD1660 by STMicroelectronics

SD1660

STMicroelectronics

SD1660 by STMicroelectronics is a NPN RF BJT with 2 elements, suitable for amplifier applications. It operates in the ultra high frequency band, with max power dissipation of 310W and max collector-emitter voltage of 30V. This transistor has a common emitter configuration and is surface mountable.
SD1855 by STMicroelectronics

SD1855

STMicroelectronics

SD1855 by STMicroelectronics is a NPN RF Power BJT with 20.6W power dissipation, suitable for L Band applications like amplifiers. It has a max collector-emitter voltage of 25V, max operating temp of 200 °C, and a min DC current gain of 15 hFE.
SD1487 by STMicroelectronics

SD1487

STMicroelectronics

STMicroelectronics' SD1487 is a NPN RF Power BJT with 18V VCE, 20A IC, and high-frequency band. Ideal for amplifier applications, it features a plastic/epoxy package, single configuration, and radial terminal position in a round shape. Operating up to 200 °C, it has a flange mount style with 4 terminals.
BLW79 by NXP Semiconductors

BLW79

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 9 dB;
BFQ295 by NXP Semiconductors

BFQ295

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; No. of Terminals: 3;
2N3375 by STMicroelectronics

2N3375

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11.6 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;
BFQ108 by NXP Semiconductors

BFQ108

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .3 A; Transistor Application: AMPLIFIER;
BLS2731-10TRAY by NXP Semiconductors

BLS2731-10TRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT;
MRF450 by New Jersey Semiconductor Products

MRF450

New Jersey Semiconductor Products

NPN; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 25 V; No. of Elements: 1; Transistor Element Material: SILICON;
1214-110M by Microsemi

1214-110M

Microsemi

Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.
BLV2044 by NXP Semiconductors

BLV2044

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Maximum Power Dissipation Ambient: 50 W; Maximum Collector-Emitter Voltage: 28 V;
BLX97 by NXP Semiconductors

BLX97

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; No. of Elements: 1;