NXP Semiconductors - MRFE6S9200HSR3

MRFE6S9200HSR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFE6S9200HSR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;
Datasheet MRFE6S9200HSR3 Datasheet
In Stock897
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 58 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
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