NXP Semiconductors - MRFE6VP61K25GNR6

  1. Home
  2. NXP Semiconductors - MRFE6VP61K25GNR6
MRFE6VP61K25GNR6 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFE6VP61K25GNR6
Description RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
In Stock2,672
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,672 $199.160 $532,155.520

Popular Products

Category Top Products

BLF177 by Ampleon Netherlands B V

BLF177

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;
TGF4212XCMX by Texas Instruments

TGF4212XCMX

Texas Instruments

TGF4212XCMX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in KU BAND frequency range. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
MRF181ZR1 by Onsemi

MRF181ZR1

Onsemi

MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
FLU35XM by Fujitsu Semiconductor America

FLU35XM

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;
TSD2900 by STMicroelectronics

TSD2900

STMicroelectronics

TSD2900 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. Featuring a 1.25A Max Drain Current and METAL-OXIDE SEMICONDUCTOR technology, it can withstand temperatures up to 200 °C.
PD55035STR1-E by STMicroelectronics

PD55035STR1-E

STMicroelectronics

RF Power Field-Effect Transistors;
A2T18S165-12SR3 by NXP Semiconductors

A2T18S165-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2T21S260-12SR3 by NXP Semiconductors

A2T21S260-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
RF2L15200CB4 by STMicroelectronics

RF2L15200CB4

STMicroelectronics

RF Power Field-Effect Transistors;
LET9120 by STMicroelectronics

LET9120

STMicroelectronics

LET9120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, breakdown voltage of 80 V, and operates in the L band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 200 W.
A2T20H330W24SR6 by NXP Semiconductors

A2T20H330W24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF6G15L-250PBRN by NXP Semiconductors

BLF6G15L-250PBRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
STAC1214-250 by STMicroelectronics

STAC1214-250

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934065659112 by NXP Semiconductors

934065659112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Terminal Position: DUAL; Transistor Application: AMPLIFIER;
BLF6G10S-45,112 by NXP Semiconductors

BLF6G10S-45,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
AFT09MS007NT1 by NXP Semiconductors

AFT09MS007NT1

NXP Semiconductors

AFT09MS007NT1 by NXP Semiconductors is an N-CHANNEL RF Power FET with a max power dissipation of 182W. It operates at up to 150°C, making it suitable for high-temperature applications. With surface mount capability and a single configuration, it's ideal for various RF power amplification needs.
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
AFT09S200W02SR3 by NXP Semiconductors

AFT09S200W02SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MW6S004NT1 by NXP Semiconductors

MW6S004NT1

NXP Semiconductors

The NXP Semiconductors MW6S004NT1 is a single N-channel RF Power FET with a 68V DS breakdown voltage. It operates in enhancement mode, suitable for amplifier applications in the L band. This transistor features a small outline package, metal-oxide semiconductor technology, and can withstand temperatures up to 150°C.
934065908118 by NXP Semiconductors

934065908118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;