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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MRFG35002N6AT1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Operating Mode: DEPLETION MODE; |
| Datasheet | MRFG35002N6AT1 Datasheet |
| In Stock | 2,880 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | FET RF Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| No. of Terminals: | 4 |
| Terminal Position: | QUAD |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PQSO-N4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | C BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 3 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 8 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |
