NXP Semiconductors - MRFG35003N6AT1

MRFG35003N6AT1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFG35003N6AT1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Transistor Element Material: GALLIUM ARSENIDE; No. of Terminals: 4;
Datasheet MRFG35003N6AT1 Datasheet
In Stock3,240
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Sub-Category: FET RF Small Signal
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: QUAD
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PQSO-N4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Highest Frequency Band: C BAND
Maximum Operating Temperature: 85 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 3
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
3,240 $15.090 $48,891.600

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