NXP Semiconductors - MRFG35010AR1

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MRFG35010AR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFG35010AR1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
Datasheet MRFG35010AR1 Datasheet
In Stock251
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 175 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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