MRFG35010R1 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MRFG35010R1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
Datasheet	MRFG35010R1 Datasheet
In Stock	4,969

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Sub-Category:	FET RF Small Signal
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	15 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PDFM-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Power Dissipation Ambient:	28.3 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,969	-	-

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