NXP Semiconductors - MRFIC0930R2

  1. Home
  2. NXP Semiconductors - MRFIC0930R2
MRFIC0930R2 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFIC0930R2
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 3 dBm;
Datasheet MRFIC0930R2 Datasheet
In Stock2,676
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 800 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 12 mA
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -30 Cel
Mounting Feature: SURFACE MOUNT
No. of Terminals: 8
Maximum Input Power (CW): 3 dBm
Package Equivalence Code: SOP8,.25
Technology: GAAS
Additional Features: LOW NOISE
Maximum Operating Temperature: 70 Cel
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 17 dB
Power Supplies (V): 2.8
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,676 - -

Popular Products

Category Top Products

HMC606LC5 by Hittite Microwave

HMC606LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC478ST89E by Analog Devices

HMC478ST89E

Analog Devices

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.
HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.
SBB2089ZSR by Rf Micro Devices

SBB2089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
ADPA7006AEHZ-R7 by Analog Devices

ADPA7006AEHZ-R7

Analog Devices

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.
TQL9062 by Qorvo

TQL9062

Qorvo

The Qorvo TQL9062 is a wide band medium power RF amplifier with 15 dB gain, operating from 500 MHz to 6 GHz. It has a max input power of 33 dBm and VSWR of 1.29, suitable for various RF applications. Constructed with E-PHEMT technology, it features a plastic/epoxy package body and operates b/w -40°C to 105°C.
RA35H1516M-101 by Mitsubishi Electric

RA35H1516M-101

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.
TGA2578 by Qorvo

TGA2578

Qorvo

TGA2578 by Qorvo is a GAN technology RF amplifier with 27 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. With a compact design and surface mount feature, it can handle temperatures up to 275°C.
BLM7G1822S-20PBGY by NXP Semiconductors

BLM7G1822S-20PBGY

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;
SPF-5122Z by Sirenza Microdevices

SPF-5122Z

Sirenza Microdevices

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;
RA07N4047M-501 by Mitsubishi Electric

RA07N4047M-501

Mitsubishi Electric

NARROW BAND HIGH POWER;
HMC453ST89ETR by Hittite Microwave

HMC453ST89ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC327MS8GTR by Analog Devices

HMC327MS8GTR

Analog Devices

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.
HMC463LP5ETR by Hittite Microwave

HMC463LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;
GALI-2+ by Mini-circuits

GALI-2+

Mini-circuits

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.
HMC752LC4TR by Analog Devices

HMC752LC4TR

Analog Devices

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.
ADL5523ACPZ-R7 by Analog Devices

ADL5523ACPZ-R7

Analog Devices

ADL5523ACPZ-R7 by Analog Devices is a wideband high-power RF amplifier with 17.5 dB gain, operating from 400 MHz to 4 GHz. It features GaAs technology, matte tin terminal finish, and a plastic/epoxy package suitable for surface mount applications in RF and microwave systems.
TQP3M9008 by Triquint Semiconductor

TQP3M9008

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;
HMC478ST89ETR by Analog Devices

HMC478ST89ETR

Analog Devices

Analog Devices' HMC478ST89ETR is a wide band low power RF amplifier with 11 dB gain, operating from 0 to 4000 MHz. It has a max input power of 5 dBm and operates on a 5V supply with a current draw of 82 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
M57710-A by Mitsubishi Electric

M57710-A

Mitsubishi Electric

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.