NXP Semiconductors - MRFIC0970R2

  1. Home
  2. NXP Semiconductors - MRFIC0970R2
MRFIC0970R2 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFIC0970R2
Description NARROW BAND HIGH POWER; Maximum Operating Frequency: 915 MHz; Maximum Voltage Standing Wave Ratio: 10; Construction: COMPONENT; Minimum Operating Frequency: 880 MHz; Maximum Operating Temperature: 85 Cel;
Datasheet MRFIC0970R2 Datasheet
In Stock3,225
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 10
Construction: COMPONENT
Maximum Input Power (CW): 15 dBm
Minimum Operating Frequency: 880 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 915 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,225 - -

Popular Products

Category Top Products

MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
HMC659LC5 by Analog Devices

HMC659LC5

Analog Devices

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.
MGA-62563-TR1 by Broadcom

MGA-62563-TR1

Broadcom

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.
HMC816LP4ETR by Hittite Microwave

HMC816LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
ADL8111ACCZN by Analog Devices

ADL8111ACCZN

Analog Devices

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
CMPA5585030F by Wolfspeed

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER;
HMC752LC4TR by Analog Devices

HMC752LC4TR

Analog Devices

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.
HMC505LP4TR by Hittite Microwave

HMC505LP4TR

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
HMC3653LP3BETR by Analog Devices

HMC3653LP3BETR

Analog Devices

Analog Devices' HMC3653LP3BETR is a wide band low power RF amplifier with 12 terminals, operating from 7-15 GHz. It has a supply voltage of 5V and consumes up to 55mA current. Suitable for RF & microwave applications, it offers bipolar technology in a surface mount package.
HMC994APM5E by Analog Devices

HMC994APM5E

Analog Devices

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.
HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.
TGA2578-CP by Qorvo

TGA2578-CP

Qorvo

TGA2578-CP by Qorvo is a GAN technology RF amplifier with 26 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. This module features -2.8V/28V power supplies, surface mounting, and requires 400mA supply current.
SPF5122ZSR by Rf Micro Devices

SPF5122ZSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
RF5110GTR7 by Qorvo

RF5110GTR7

Qorvo

Qorvo's RF5110GTR7 is a wide band medium power amplifier with 33 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 13 dBm and VSWR of 10, suitable for RF & microwave applications. With a construction of hybrid technology and surface mounting feature, it operates at temperatures ranging from -40°C to 85°C.
SGA-3363Z by Sirenza Microdevices

SGA-3363Z

Sirenza Microdevices

SGA-3363Z by Sirenza Microdevices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates on a 2.6V supply, making it suitable for various RF and microwave applications requiring high performance in plastic/epoxy package.
TGA2526 by Triquint Semiconductor

TGA2526

Triquint Semiconductor

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;
SGA-6489Z by Sirenza Microdevices

SGA-6489Z

Sirenza Microdevices

SGA-6489Z by Sirenza Microdevices is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and VSWR of 1.8, suitable for surface mount applications in RF & microwave systems.
SBB4089Z by Qorvo

SBB4089Z

Qorvo

Qorvo's SBB4089Z is a wide band low power RF amplifier with 13.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount construction in RF and microwave systems.
HMC441LP3TR by Analog Devices

HMC441LP3TR

Analog Devices

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.