NXP Semiconductors - MRFIC0970R2

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

Qorvo's SBB5089ZSR is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.

Analog Devices' HMC960LP4E is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It features a surface mount package with 24 terminals and operates b/w -40°C to +85°C. Ideal for applications requiring high power amplification in RF and microwave systems.

Qorvo's QPM1000 is a wide band low power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 33 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring surface mount construction in RF & microwave systems.

Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.

Qorvo's QPA1027 is a GAN technology RF amplifier with 31dB gain, operating from 2800-3500MHz. It has a max input power of 29dBm and VSWR of 3, suitable for narrowband high-power applications. With surface mount feature and 50 ohm impedance, it is ideal for RF & microwave systems requiring high performance in plastic/epoxy package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

The Mini-circuits PHA-202+ is a wideband medium power RF amplifier with 13.2 dB gain, operating from 30 MHz to 2700 MHz. It can handle up to 19 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.

Qorvo's RF5110G is a GAAS technology narrow band high power amplifier with 32 dB gain. It operates b/w 880-915 MHz, handles up to 13 dBm CW input power, and has a VSWR of 10. Suitable for RF applications requiring high power amplification in the frequency range.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP8,.19;

The Mini-circuits ERA-2SM+ is a wide band low power RF amplifier with 11.9 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 15 dBm input power, and has a VSWR of 1.6. Ideal for RF & microwave applications requiring compact surface mount components.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.

NXP Semiconductors' BGA2870,115 is a RF & Microwave Amplifier with 2.5V power supply, 6 terminals, and 18.5mA max supply current. It features a plastic/epoxy package body material and tin terminal finish, suitable for surface mount applications in various electronic devices.

Analog Devices' HMC606LC5 is a wide band low power RF amplifier with 9.5 dB gain and 15 dBm CW input power. Operating from 2-18 GHz, it has 32 terminals, consumes 95 mA at 5V, and features GaAs technology in a ceramic package. Ideal for RF & microwave applications requiring high performance amplification in a compact form factor.