NXP Semiconductors - MW4IC2020NBR1

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MW4IC2020NBR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MW4IC2020NBR1
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Voltage Standing Wave Ratio: 3; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 1805 MHz;
Datasheet MW4IC2020NBR1 Datasheet
In Stock858
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1805 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -10 Cel
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 3
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: FLNG,.8''H SPACE
Technology: MOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1990 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 27 dB
Power Supplies (V): 26
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