MOS RF & Microwave Amplifiers 48

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MW7IC2220NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
MW7IC008NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	2	38 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		21.5 dB		MATTE TIN		e3	100 MHz	1000 MHz
MW7IC930NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
MW7IC2040NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	25 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		29.5 dB		TIN		e3	1805 MHz	1990 MHz
MD7IC2755NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		TIN		e3	2500 MHz	2700 MHz
MW7IC2725GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
MW7IC2725NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
MWE6IC9080NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20.5 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		Matte Tin (Sn)		e3	865 MHz	960 MHz
MWE6IC9080NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20.5 dBm	10		MODULE	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		MATTE TIN		e3	865 MHz	960 MHz
MW6IC1940GNBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
MW4IC2020NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
MW5IC2030GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
MDE6IC9120GNR1	NXP Semiconductors				PLASTIC/EPOXY	MOS	2					28	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MW4IC915GNBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e3	860 MHz	960 MHz
MW5IC2030NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
MW6IC1940NBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
MW4IC2020GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
MW6IC2240GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	23 dBm	3	370 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
MW6IC2240NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	23 dBm	3	370 mA	COMPONENT	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
MDE6IC9120NR1	NXP Semiconductors				PLASTIC/EPOXY	MOS	2					28	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MWE6IC9100NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		10		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
MWIC930GNR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Matte Tin (Sn)		e3	746 MHz	960 MHz
MWIC930R1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
MDE6IC7120NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	2	30 dBm	10		COMPONENT	28	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers		32 dB		Matte Tin (Sn)		e3	728 MHz	768 MHz
MWIC930GR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
MHVIC2115R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1		3	204 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	31 dB					1600 MHz	2600 MHz
MHVIC915R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MD7IC2755GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		MATTE TIN		e3	2500 MHz	2700 MHz
MHVIC915NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MHVIC2115NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1		3		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		31 dB					1600 MHz	2600 MHz
MHV5IC1810NR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	26.5 dB			IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ		1805 MHz	1990 MHz
MHVIC2114R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MHVIC910HR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	10	150 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MHV5IC2215NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		23 dB					1500 MHz	2200 MHz
MHVIC2114NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MHVIC910HNR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	10		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MW7IC930NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	10		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
MW7IC2020NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	1	37 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		31 dB		TIN		e3	1805 MHz	2170 MHz
MW7IC2240GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5	420 mA	COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB		TIN		e3	2000 MHz	2200 MHz
MW7IC2040NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	25 dBm	5		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		29.5 dB		Matte Tin (Sn)		e3	1805 MHz	1990 MHz
MW7IC915NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	1	4.7 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		35 dB		TIN		e3	728 MHz	960 MHz
MW7IC2220GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
MW7IC930GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
MW7IC2240NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5	420 mA	COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB		TIN		e3	2000 MHz	2200 MHz
MW7IC2220NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	5		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
UPD5742T6J-E4-A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	MOS	1	-10 dBm		.48 mA	COMPONENT	1.5/5	LCC3(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel
PF08103B	Renesas Electronics	NARROW BAND HIGH POWER	SURFACE MOUNT	8	CERAMIC	MOS	2	10 dBm	3.5		MODULE	3.5	DILCC8,.46	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		1710-1785MHZ		880 MHz	915 MHz
PF08127B-TB	Renesas Electronics		SURFACE MOUNT	8	PLASTIC/EPOXY	MOS	3					3.5	SOLCC8,.3,47		RF/Microwave Amplifiers

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.