NXP Semiconductors - MWE6IC9080NR1

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MWE6IC9080NR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MWE6IC9080NR1
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Frequency: 960 MHz; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 865 MHz;
Datasheet MWE6IC9080NR1 Datasheet
In Stock1,023
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 865 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
Maximum Input Power (CW): 20.5 dBm
Package Equivalence Code: FLNG,.67"H.SPACE
Technology: MOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 960 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 27 dB
Power Supplies (V): 28
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