NXP Semiconductors - MW7IC930GNR1

  1. Home
  2. NXP Semiconductors - MW7IC930GNR1
MW7IC930GNR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MW7IC930GNR1
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: TIN; Maximum Input Power (CW): 20 dBm; Power Supplies (V): 28;
In Stock168
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 920 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: TIN
JESD-609 Code: e3
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: FLNG,.67"H.SPACE
Technology: MOS
Characteristic Impedance: 50 ohm
Additional Features: IT CAN ALSO OPERATE AT 728 TO 768 MHZ
Maximum Operating Frequency: 960 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 33 dB
Power Supplies (V): 28
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
168 $38.390 $6,449.520

Popular Products

Category Top Products

HMC506LP4ETR by Hittite Microwave

HMC506LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
HMC451LP3ETR by Hittite Microwave

HMC451LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
SGA-3463Z by Sirenza Microdevices

SGA-3463Z

Sirenza Microdevices

SGA-3463Z by Sirenza Microdevices is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC499LC4TR by Analog Devices

HMC499LC4TR

Analog Devices

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.
RF3827 by Qorvo

RF3827

Qorvo

Qorvo's RF3827 is a wide band medium power amplifier with 20dB gain, operating from 5MHz to 1500MHz. It has a max input power of 13dBm and VSWR of 20, suitable for RF applications requiring up to 8V supply voltage. The component is constructed using GaAs technology in a plastic/epoxy package, ideal for surface mounting in various RF and microwave systems.
PMA3-14LN+ by Mini-circuits

PMA3-14LN+

Mini-circuits

The Mini-circuits PMA3-14LN+ is a wide band low power RF amplifier with 20.3 dB gain, operating from 50 MHz to 10 GHz. It has a max input power of 12 dBm and VSWR of 1.22, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
HMC561LP3E by Hittite Microwave

HMC561LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
MGA-86563-TR1G by Agilent Technologies

MGA-86563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
HMC952ALP5GETR by Analog Devices

HMC952ALP5GETR

Analog Devices

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
ALM-32220 by Broadcom

ALM-32220

Broadcom

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.
MAR-3SM by Mini-circuits

MAR-3SM

Mini-circuits

The Mini-circuits MAR-3SM is a wide band low power RF amplifier with 8 dB gain and 50 ohm impedance. It operates from 0 to 2000 MHz, handling up to 13 dBm input power. Ideal for RF & microwave applications requiring compact, surface mount components with high performance.
LEE-39+ by Mini-circuits

LEE-39+

Mini-circuits

The Mini-circuits LEE-39+ is a wide band low power RF amplifier with 18.5 dB gain, operating from 0 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.
CMD291P4 by Qorvo

CMD291P4

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
TQP3M9035 by Triquint Semiconductor

TQP3M9035

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;
HMC752LC4 by Hittite Microwave

HMC752LC4

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 28000 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e4; Maximum Input Power (CW): -5 dBm; Maximum Operating Temperature: 85 Cel;
CMD291 by Qorvo

CMD291

Qorvo

WIDE BAND MEDIUM POWER;
NJG1150UA2-TE1 by New Japan Radio

NJG1150UA2-TE1

New Japan Radio

NARROW BAND LOW POWER;
HMC532LP4E by Hittite Microwave

HMC532LP4E

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;
HMC311ST89TR by Analog Devices

HMC311ST89TR

Analog Devices

Analog Devices' HMC311ST89TR is a wide band low power RF amplifier with 5V supply, operating from -40 to 85°C. It features bipolar technology, surface mount package, and draws max 74mA current. Ideal for RF & microwave applications requiring compact amplification solutions.