NXP Semiconductors - MWE6IC9080NBR1

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MWE6IC9080NBR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MWE6IC9080NBR1
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Package Equivalence Code: FLNG,.8''H SPACE; Maximum Input Power (CW): 20.5 dBm; Minimum Operating Frequency: 865 MHz;
In Stock2,094
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 865 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
Maximum Input Power (CW): 20.5 dBm
Package Equivalence Code: FLNG,.8''H SPACE
Technology: MOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 960 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 27 dB
Power Supplies (V): 28
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Pricing (USD)

Qty. Unit Price Ext. Price
2,094 $73.100 $153,071.400

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