NXP Semiconductors - MW6IC1940GNBR1

  1. Home
  2. NXP Semiconductors - MW6IC1940GNBR1
MW6IC1940GNBR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MW6IC1940GNBR1
Description NARROW BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Maximum Input Power (CW): 20 dBm; Maximum Operating Frequency: 2000 MHz;
Datasheet MW6IC1940GNBR1 Datasheet
In Stock1,510
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1920 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 440 mA
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 3
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: MOT CASE 1329A-03
Technology: MOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 2000 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 26 dB
Power Supplies (V): 28
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,510 - -

Popular Products

Category Top Products

HMC441LP3E by Hittite Microwave

HMC441LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 13500 MHz;
MGA-61563-TR2G by Agilent Technologies

MGA-61563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 48 mA;
TQP9111 by Qorvo

TQP9111

Qorvo

Qorvo's TQP9111 is a narrow band medium power RF amplifier with 29.8 dB gain, operating from 1800-2700 MHz. It can handle up to 23 dBm CW input power and operates b/w -40 to 105°C. Ideal for RF & microwave applications requiring high gain and power handling capabilities.
BGU8103 by NXP Semiconductors

BGU8103

NXP Semiconductors

The NXP Semiconductors BGU8103 is a narrow band low power RF amplifier with a gain of 14.5 dB. It operates at frequencies b/w 1559 MHz and 1610 MHz, making it suitable for applications in the RF and microwave field. Its compact surface mount package and low power consumption of 1.6 mA make it an ideal choice for various wireless communication systems.
RA07H4047M-101 by Mitsubishi Electric

RA07H4047M-101

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.
MGA-72543-TR1 by Hewlett Packard

MGA-72543-TR1

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;
HMC311SC70ETR by Hittite Microwave

HMC311SC70ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;
SBF4089ZSR by Rf Micro Devices

SBF4089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC564LC4 by Hittite Microwave

HMC564LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;
RA07H4047M-501 by Mitsubishi Electric

RA07H4047M-501

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-501 is a 50 ohm hybrid module with narrow band high power RF/Microwave device type. It offers 25.22 dB gain, operates b/w 400-470 MHz frequencies, and handles up to 14.77 dBm input power. Ideal for applications requiring high-power amplification in the RF & Microwave domain.
HMC5879LS7 by Hittite Microwave

HMC5879LS7

Hittite Microwave

WIDE BAND HIGH POWER;
SST12LP08-QXBE by Microchip Technology

SST12LP08-QXBE

Microchip Technology

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.
XP1039-QJ-0G00 by M/a-com Technology Solutions

XP1039-QJ-0G00

M/a-com Technology Solutions

XP1039-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF & microwave amplifier with a gain of 15.5 dB. It operates in the frequency range of 5600 MHz to 7100 MHz and can handle a max input power of 25 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
HMC1082LP4E by Analog Devices

HMC1082LP4E

Analog Devices

HMC1082LP4E by Analog Devices is a wide band medium power RF amplifier with 20 dB gain. It operates from 5V supply, covering frequencies from 5500 MHz to 18000 MHz. This component, housed in a plastic/epoxy package, is ideal for RF and microwave applications requiring high performance amplification.
TQL9092 by Qorvo

TQL9092

Qorvo

The Qorvo TQL9092 is a wide band low power RF amplifier with 21 dB gain and 50 ohm impedance. It operates from 600 MHz to 4200 MHz, handling up to 33 dBm CW input power. Suitable for various applications requiring high-performance RF amplification in plastic/epoxy packages.
ADA-4643-BLKG by Agilent Technologies

ADA-4643-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);
HMC409LP4E by Hittite Microwave

HMC409LP4E

Hittite Microwave

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 28 dB;
BGA420H6327XTSA1 by Infineon Technologies

BGA420H6327XTSA1

Infineon Technologies

Infineon's BGA420H6327XTSA1 is a wide band low power RF amplifier with 11dB gain, suitable for frequencies ranging from 100MHz to 1800MHz. With a max input power of 0dBm, it operates in temperatures from -65°C to 150°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC463LP5ETR by Analog Devices

HMC463LP5ETR

Analog Devices

HMC463LP5ETR by Analog Devices is a wide band low power RF amplifier with a gain of 8 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 18 dBm. This surface mount component is commonly used in RF and microwave applications.