Renesas Electronics - PF08127B-TB

  1. Home
  2. Renesas Electronics - PF08127B-TB
PF08127B-TB by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PF08127B-TB
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Package Equivalence Code: SOLCC8,.3,47;
Datasheet PF08127B-TB Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 3
No. of Terminals: 8
Package Equivalence Code: SOLCC8,.3,47
Technology: MOS
Sub-Category: RF/Microwave Amplifiers
Power Supplies (V): 3.5
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BGA2815,115 by NXP Semiconductors

BGA2815,115

NXP Semiconductors

NXP Semiconductors' BGA2815,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and 21.1mA max supply current. It comes in a plastic/epoxy package and features tin terminal finish for surface mount applications.
MGA-86576-STR by Agilent Technologies

MGA-86576-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
MAX2659ELT/V+ by Maxim Integrated

MAX2659ELT/V+

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
XL1000-BD-000V by Mimix Broadband

XL1000-BD-000V

Mimix Broadband

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;
MAX2630EUS-T by Maxim Integrated

MAX2630EUS-T

Maxim Integrated

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.
HMC788ALP2E by Analog Devices

HMC788ALP2E

Analog Devices

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
PHA-102+ by Mini-circuits

PHA-102+

Mini-circuits

WIDE BAND LOW POWER;
ABA-31563-BLKG by Agilent Technologies

ABA-31563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
BGU8052X by NXP Semiconductors

BGU8052X

NXP Semiconductors

WIDE BAND LOW POWER;
MAAM-011101-TR1000 by M/a-com Technology Solutions

MAAM-011101-TR1000

M/a-com Technology Solutions

MAAM-011101-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 17 dB gain, operating from 4 to 20 GHz. It can handle up to 23 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification.
HMC694LP4ETR by Analog Devices

HMC694LP4ETR

Analog Devices

Analog Devices' HMC694LP4ETR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and is designed for wideband low-power applications in RF & microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting.
HMC499LC4 by Analog Devices

HMC499LC4

Analog Devices

HMC499LC4 by Analog Devices is a ceramic-packaged RF amplifier with a wide band medium power capability. It operates at frequencies ranging from 21 GHz to 32 GHz, providing a gain of 9 dB. This component is suitable for surface mount applications and can handle a max input power of 20 dBm.
RF5110G by Rf Micro Devices

RF5110G

Rf Micro Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-72543-TR1G by Agilent Technologies

MGA-72543-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
HMC391LP4E by Hittite Microwave

HMC391LP4E

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;
SPF5122ZSR by Rf Micro Devices

SPF5122ZSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
GALI-2 by Mini-circuits

GALI-2

Mini-circuits

GALI-2 by Mini-circuits is a wideband low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 0 to 8000 MHz, handling up to 15 dBm CW input power. Ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45°C to 85°C.
XP1050-QJ-0G00 by Mimix Broadband

XP1050-QJ-0G00

Mimix Broadband

WIDE BAND HIGH POWER; Construction: COMPONENT; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7000 MHz; Minimum Operating Temperature: -40 Cel;