NXP Semiconductors - MD7IC2755GNR1

  1. Home
  2. NXP Semiconductors - MD7IC2755GNR1
MD7IC2755GNR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MD7IC2755GNR1
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 10; Gain: 23 dB;
In Stock1,566
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 2500 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Functions: 2
Maximum Voltage Standing Wave Ratio: 10
Maximum Input Power (CW): 30 dBm
Package Equivalence Code: FLNG,.67"H.SPACE
Technology: MOS
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 2700 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 23 dB
Power Supplies (V): 28
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,566 $101.190 $158,463.540

Popular Products

Category Top Products

HMC561LP3E by Analog Devices

HMC561LP3E

Analog Devices

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;
HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
760 by Anaren

760

Anaren

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;
TQL9092 by Qorvo

TQL9092

Qorvo

The Qorvo TQL9092 is a wide band low power RF amplifier with 21 dB gain and 50 ohm impedance. It operates from 600 MHz to 4200 MHz, handling up to 33 dBm CW input power. Suitable for various applications requiring high-performance RF amplification in plastic/epoxy packages.
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
HMC475ST89E by Hittite Microwave

HMC475ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;
MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
BGA622H6820XTSA1 by Infineon Technologies

BGA622H6820XTSA1

Infineon Technologies

Infineon's BGA622H6820XTSA1 is a wide band low power RF amplifier with 13.6 dB gain, operating from 500 MHz to 6000 MHz. It can handle up to 6 dBm input power and operates b/w -65°C to 150°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.
MW7IC2220NR1 by NXP Semiconductors

MW7IC2220NR1

NXP Semiconductors

The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.
HMC478MP86ETR by Analog Devices

HMC478MP86ETR

Analog Devices

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.
AMMP-6220-TR2 by Agilent Technologies

AMMP-6220-TR2

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3; Package Equivalence Code: LCC8,.2SQ,28;
HMC606LC5TR by Hittite Microwave

HMC606LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 15 dBm; Maximum Operating Frequency: 18000 MHz; Minimum Operating Temperature: -40 Cel;
HMC516LC5TR by Hittite Microwave

HMC516LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC429LP4E by Analog Devices

HMC429LP4E

Analog Devices

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.
MSA-1105 by Agilent Technologies

MSA-1105

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.145CIR;
GALI-51F+ by Mini-circuits

GALI-51F+

Mini-circuits

GALI-51F+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring high performance in a compact package. The component is constructed using bipolar technology and can operate in temperatures ranging from -45 to 85°C.
BGA2870,115 by NXP Semiconductors

BGA2870,115

NXP Semiconductors

NXP Semiconductors' BGA2870,115 is a RF & Microwave Amplifier with 2.5V power supply, 6 terminals, and 18.5mA max supply current. It features a plastic/epoxy package body material and tin terminal finish, suitable for surface mount applications in various electronic devices.
MAX2611EUS+T by Analog Devices

MAX2611EUS+T

Analog Devices

MAX2611EUS+T by Analog Devices is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.