NXP Semiconductors - MW4IC2230GMBR1

  1. Home
  2. NXP Semiconductors - MW4IC2230GMBR1
MW4IC2230GMBR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MW4IC2230GMBR1
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm; Maximum Voltage Standing Wave Ratio: 3; JESD-609 Code: e0;
Datasheet MW4IC2230GMBR1 Datasheet
In Stock4,512
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 2110 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -10 Cel
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 3
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: FLNG,.8''H SPACE
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2170 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 29 dB
Power Supplies (V): 28
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,512 - -

Popular Products

Category Top Products

RF3931 by Rf Micro Devices

RF3931

Rf Micro Devices

RF3931 by Rf Micro Devices is a ceramic module with a wide band high power RF or microwave device type. It has a max input power of 37 dBm and a gain of 15 dB. This amplifier operates within a frequency range of 0 MHz to 3000 MHz and is suitable for various RF and microwave applications.
HMC1087F10 by Analog Devices

HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.
QPA4501SR by Qorvo

QPA4501SR

Qorvo

Qorvo's QPA4501SR is a GAN RF amplifier with 26dB gain, operating from 4400-5000MHz. It offers 12dBm CW input power and VSWR of 10, suitable for narrowband high-power applications in RF & microwave systems. The component has 36 terminals, surface-mountable in plastic/epoxy package for easy integration.
HMC636ST89E by Hittite Microwave

HMC636ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
NPA1006A by M/a-com Technology Solutions

NPA1006A

M/a-com Technology Solutions

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.
AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.
AMMP-6220-TR2 by Broadcom

AMMP-6220-TR2

Broadcom

AMMP-6220-TR2 by Broadcom is a wide band low power RF amplifier with 22 dB gain. It operates from 6 GHz to 20 GHz, with max input power of 15 dBm and characteristic impedance of 50 ohm. Ideal for applications requiring surface mount construction in RF & microwave systems.
HMC902LP3ETR by Analog Devices

HMC902LP3ETR

Analog Devices

Analog Devices' HMC902LP3ETR is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it ideal for RF & microwave applications requiring high performance in a compact package.
MSA-1105 by Avantek

MSA-1105

Avantek

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;
GALI-21 by Mini-circuits

GALI-21

Mini-circuits

GALI-21 by Mini-circuits is a wide band low power RF amplifier with 11.5 dB gain, operating from 0 to 8000 MHz. It can handle up to 15 dBm CW input power and has a VSWR of 2.5, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -45°C to 85°C.
MW7IC008NT1 by Freescale Semiconductor

MW7IC008NT1

Freescale Semiconductor

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Gain: 21.5 dB;
MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
TQP369184 by Qorvo

TQP369184

Qorvo

Qorvo's TQP369184 is a wide band low power RF amplifier with 18.8 dB gain and 24 dBm max input power. Operating from -40 to 105°C, it covers frequencies from 0 to 6000 MHz, making it ideal for various RF and microwave applications.
HMC636ST89 by Hittite Microwave

HMC636ST89

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
TQP7M9103 by Qorvo

TQP7M9103

Qorvo

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.
BGA612H6327XTSA1 by Infineon Technologies

BGA612H6327XTSA1

Infineon Technologies

Infineon's BGA612H6327XTSA1 is a wide band low power RF amplifier with 16.3 dB gain and 10 dBm max input power. Operating from -65 to 150°C, it covers frequencies from 0 to 2800 MHz. Ideal for RF & microwave applications requiring high gain in a compact form factor.
XP1050-QJ-0G00 by M/a-com Technology Solutions

XP1050-QJ-0G00

M/a-com Technology Solutions

XP1050-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain, operating from 7-9 GHz. It can handle up to 25 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
HMC465LP5E by Hittite Microwave

HMC465LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC506LP4E by Hittite Microwave

HMC506LP4E

Hittite Microwave

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;
CMD245C4 by Custom Mmic Design Services

CMD245C4

Custom Mmic Design Services

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4; Minimum Operating Temperature: -55 Cel; Gain: 14 dB;