NXP Semiconductors - MW6IC2420NBR1

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.

Agilent Technologies' MGA-545P8-TR1G is a wide band medium power RF amplifier with 10.5 dB gain, operating from 50 MHz to 7000 MHz. It can handle up to 20 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring high frequency amplification in component construction.

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.

The NXP Semiconductors MMZ09312BT1 is a wide band medium power RF amplifier with 29 dB gain, operating from 400 MHz to 1000 MHz. It has a max input power of 14 dBm and requires a 5V power supply with a max current draw of 83 mA. Ideal for applications requiring surface mount components in RF and microwave systems.

The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.

SGA-3363-TR1 by Rf Micro Devices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 3600 MHz. It has a max input power of 5 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

WIDE BAND MEDIUM POWER;

HELA-10D by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, handling up to 20 dBm CW input power. It operates b/w 8-300 MHz frequencies with VSWR of 1.2, suitable for various RF and microwave applications requiring a 50 ohm impedance.

Broadcom's MGA-31689-BLKG is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. This wide band medium power device is ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Broadcom's MGA-30689-BLKG is a GAAS RF amplifier with 13.7 dB gain, operating from 40 MHz to 3000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems.

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;

Analog Devices' HMC374ETR is a wide band medium power RF amplifier with 6dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 5V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Construction: COMPONENT; Additional Features: I/P POWER-MAX (PEAK)=31.76DBM; Gain: 8 dB; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -54 Cel;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.