NXP Semiconductors - MW7IC2750NR1

Broadcom's MGA-61563-BLKG is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. With a compact plastic/epoxy package and surface mounting feature, it offers high performance with 48mA supply current at 3/5V.

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

WIDE BAND LOW POWER;

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2.5; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 8000 MHz; Construction: COMPONENT; Gain: 20 dB;

Analog Devices' HMC6981LS6TR is a GaAs RF amplifier with 16 terminals, operating at 6V. With wideband high power capability, it has a ceramic package and can withstand temperatures from -40°C to 85°C. Ideal for surface mount applications in RF and microwave systems.

Broadcom's MGA-31189-TR1G is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply, making it suitable for wideband medium-power applications in RF and microwave systems.

Analog Devices' HMC517LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 17-26 GHz. It has a max input power of 2 dBm and operates on a 3V supply. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

HMC462-SX by Analog Devices is a PHEMT technology RF amplifier with 12.5 dB gain, operating from 2-20 GHz. It has a max input power of 18 dBm and VSWR of 1.25, making it ideal for wideband low-power applications in RF and microwave systems. With a compact surface-mount construction and requiring only 5V supply voltage, it offers high performance in a small form factor.

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.

RF/Microwave Amplifiers;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

The Qorvo AG302-86G is a GAAS technology RF amplifier with 13.3 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for wideband low-power applications, it features surface mounting and a characteristic impedance of 50 ohms.

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.

Broadcom's MGA-632P8-BLKG is a GAAS technology RF amplifier with 16dB gain, operating from 1400MHz to 3800MHz. It has a max input power of 20dBm and is ideal for wideband low-power applications. The component features surface mounting and matte tin terminal finish on an 8-terminal plastic/epoxy package body.

GALI-6F by Mini-circuits is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for RF & microwave applications requiring compact surface mount components.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; JESD-609 Code: e4; Gain: 10 dB; Maximum Operating Frequency: 20000 MHz;