NXP Semiconductors - MX1011B430W

  1. Home
  2. NXP Semiconductors - MX1011B430W
MX1011B430W by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MX1011B430W
Description NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Highest Frequency Band: L BAND; Maximum Collector-Emitter Voltage: 20 V;
Datasheet MX1011B430W Datasheet
In Stock2,801
NAME DESCRIPTION
Minimum Power Gain (Gp): 6.7 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: BASE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,801 - -

Popular Products

Category Top Products

BLX39 by NXP Semiconductors

BLX39

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 570 MHz; Maximum Collector Current (IC): 4 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
RZB06050W by NXP Semiconductors

RZB06050W

NXP Semiconductors

RZB06050W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a nominal transition frequency of 540 MHz, and operates at temperatures up to 200 °C. Its ceramic, metal-sealed package ensures reliability in ultra-high frequency settings.
AM81719-040 by STMicroelectronics

AM81719-040

STMicroelectronics

STMicroelectronics AM81719-040 is a NPN BJT transistor with 6.7 dB power gain, ideal for L Band applications. It has a max power dissipation of 79.5W and can handle up to 4.8A collector current. Suitable for amplifier circuits requiring high frequency operation at temperatures up to 200 °C.
2N5643 by STMicroelectronics

2N5643

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5 A;
PTB23002U by NXP Semiconductors

PTB23002U

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
MF1011B900YTRAY by NXP Semiconductors

MF1011B900YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Qualification: Not Qualified;
BFG591TRL13 by NXP Semiconductors

BFG591TRL13

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
RZ3135B14W by NXP Semiconductors

RZ3135B14W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR;
BLV2042-T by NXP Semiconductors

BLV2042-T

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; Transistor Element Material: SILICON;
TPV8100B by NXP Semiconductors

TPV8100B

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR; JESD-30 Code: R-CDFM-F4;
2N5642 by Microsemi

2N5642

Microsemi

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
ISL73127RHVX by Renesas Electronics

ISL73127RHVX

Renesas Electronics

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Package Style (Meter): UNCASED CHIP;
BLY92C by NXP Semiconductors

BLY92C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 1.75 A; Terminal Position: RADIAL;
MSC81111 by STMicroelectronics

MSC81111

STMicroelectronics

STMicroelectronics' MSC81111 is a NPN RF BJT with 18.8W power dissipation, suitable for L Band applications like amplifiers. Featuring a max collector current of 0.6A and operating temperature up to 200 °C, it has a ceramic-metal-sealed co-fired package body ideal for flange mount installations.
SD1449 by STMicroelectronics

SD1449

STMicroelectronics

SD1449 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 19.4W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
MSC81035M by STMicroelectronics

MSC81035M

STMicroelectronics

STMicroelectronics' MSC81035M is a NPN RF BJT transistor with 150W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 3A and operates up to 200 °C. The package style is flange mount with a radial terminal position.
BLV945B by NXP Semiconductors

BLV945B

NXP Semiconductors

BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
BLV91 by NXP Semiconductors

BLV91

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
RO2731B20W by NXP Semiconductors

RO2731B20W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 2.7 A; Maximum Operating Temperature: 200 Cel;
BFQ290 by NXP Semiconductors

BFQ290

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A;