NXP Semiconductors - NE5204D-T

  1. Home
  2. NXP Semiconductors - NE5204D-T
NE5204D-T by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number NE5204D-T
Description WIDE BAND LOW POWER; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 70 Cel; Construction: COMPONENT; Gain: 16 dB; Characteristic Impedance: 50 ohm;
Datasheet NE5204D-T Datasheet
In Stock4,696
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 1.5
Construction: COMPONENT
Minimum Operating Frequency: 0 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 70 Cel
Maximum Operating Frequency: 350 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: 0 Cel
Gain: 16 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,696 - -

Popular Products

Category Top Products

TGA2526 by Qorvo

TGA2526

Qorvo

TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.
RA35H1516M-101 by Mitsubishi Electric

RA35H1516M-101

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.
ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
RDA1005LSR by Rf Micro Devices

RDA1005LSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 4000 MHz;
MMG3002NT1 by Freescale Semiconductor

MMG3002NT1

Freescale Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;
SGA-3363-TR1 by Rf Micro Devices

SGA-3363-TR1

Rf Micro Devices

SGA-3363-TR1 by Rf Micro Devices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 3600 MHz. It has a max input power of 5 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
MGA-82563-TR1 by Hewlett Packard

MGA-82563-TR1

Hewlett Packard

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;
HMC788ALP2ETR by Analog Devices

HMC788ALP2ETR

Analog Devices

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.
ADL9006ACGZN by Analog Devices

ADL9006ACGZN

Analog Devices

RF/Microwave Amplifiers;
HMC465LP5E by Hittite Microwave

HMC465LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC634LC4TR-R5 by Analog Devices

HMC634LC4TR-R5

Analog Devices

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.
HMC414MS8GETR by Hittite Microwave

HMC414MS8GETR

Hittite Microwave

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Maximum Operating Frequency: 2800 MHz; Maximum Input Power (CW): 17 dBm; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn);
ZX60-P103LN+ by Mini-circuits

ZX60-P103LN+

Mini-circuits

Mini-circuits' ZX60-P103LN+ is a COAXIAL RF amplifier with 4.5 dB Gain, 50-3000 MHz frequency range, and 21 dBm CW power input. Ideal for wideband low-power applications, it offers a VSWR of 1.8 and operates b/w -40°C to 85°C temperature range.
AG302-86G by Triquint Semiconductor

AG302-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.
AD8350ARMZ15 by Analog Devices

AD8350ARMZ15

Analog Devices

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
RA20H8994M-101 by Mitsubishi Electric

RA20H8994M-101

Mitsubishi Electric

Mitsubishi Electric's RA20H8994M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 896-941 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and characteristic impedance of 50 ohms.
HMC453ST89ETR by Hittite Microwave

HMC453ST89ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
AM-147-PIN by Tyco Electronics M/a-com

AM-147-PIN

Tyco Electronics M/a-com

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;