NXP Semiconductors - NE5205D

  1. Home
  2. NXP Semiconductors - NE5205D
NE5205D by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number NE5205D
Description WIDE BAND LOW POWER; Maximum Operating Frequency: 550 MHz; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 16.5 dB;
Datasheet NE5205D Datasheet
In Stock2,781
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 1.5
Construction: COMPONENT
Minimum Operating Frequency: 0 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 70 Cel
Maximum Operating Frequency: 550 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: 0 Cel
Gain: 16.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,781 - -

Popular Products

Category Top Products

HMC1040LP3CE by Hittite Microwave

HMC1040LP3CE

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; No. of Functions: 1;
XP1050-QJ-0G00 by M/a-com Technology Solutions

XP1050-QJ-0G00

M/a-com Technology Solutions

XP1050-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain, operating from 7-9 GHz. It can handle up to 25 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
MGA-72543-TR1 by Broadcom

MGA-72543-TR1

Broadcom

Broadcom's MGA-72543-TR1 is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, operates at temperatures from -40°C to 85°C, and requires a 3V power supply.
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
XP1039-QJ-0G00 by M/a-com Technology Solutions

XP1039-QJ-0G00

M/a-com Technology Solutions

XP1039-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF & microwave amplifier with a gain of 15.5 dB. It operates in the frequency range of 5600 MHz to 7100 MHz and can handle a max input power of 25 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
SBB2089Z by Qorvo

SBB2089Z

Qorvo

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.
AMF-4F-02200230-15-13P by L-3 Narda-miteq

AMF-4F-02200230-15-13P

L-3 Narda-miteq

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.
HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.
RFPA3800TR13 by Rf Micro Devices

RFPA3800TR13

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;
MGA-81563 by Broadcom

MGA-81563

Broadcom

Broadcom's MGA-81563 is a GAAS RF amplifier with 6 terminals, operating from -40°C to 85°C. It requires 3V power supply, draws max 51mA current, and has a surface mount package. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
MW7IC2040NR1 by NXP Semiconductors

MW7IC2040NR1

NXP Semiconductors

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.
BGB719N7ESDE6327XTMA1 by Infineon Technologies

BGB719N7ESDE6327XTMA1

Infineon Technologies

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.
SGA-6286Z by Sirenza Microdevices

SGA-6286Z

Sirenza Microdevices

SGA-6286Z by Sirenza Microdevices is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in the RF & Microwave field.
GRF2071 by Guerrilla Rf

GRF2071

Guerrilla Rf

GRF2071 by Guerrilla Rf is a PHEMT technology RF amplifier with 18 dB gain, operating from 700 MHz to 2700 MHz. It has a max input power of 23 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40°C to 105°C.
ADA-4643-BLKG by Agilent Technologies

ADA-4643-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);
CMD317C4 by Qorvo

CMD317C4

Qorvo

WIDE BAND LOW POWER;
HMC478MP86ETR by Hittite Microwave

HMC478MP86ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
HMC549MS8G by Analog Devices

HMC549MS8G

Analog Devices

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.
HMC1040LP3CETR by Hittite Microwave

HMC1040LP3CETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;
HMC311SC70E by Analog Devices

HMC311SC70E

Analog Devices

HMC311SC70E by Analog Devices is a GAAS RF amplifier with 11 dB gain, operating from 0 to 8000 MHz. It has a max input power of 10 dBm and operates on a 5V supply with a current draw of 74 mA. Ideal for wideband low-power applications requiring surface mount installation in temperatures ranging from -40 to 85°C.