NXP Semiconductors - NE5219N-T

MAR-8ASM by Mini-circuits is a wide band low power RF amplifier with 20 dB gain, 50 ohm impedance, and 1.8 VSWR. Ideal for RF & microwave applications, it operates from -40 to 85°C, has a max input power of 13 dBm, and covers frequencies from DC to 1000 MHz.

Qorvo's SBB4089Z is a wide band low power RF amplifier with 13.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount construction in RF and microwave systems.

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.

WIDE BAND LOW POWER;

Qorvo's RF6886TR13 is a wide band high power amplifier with 31dB gain, operating from 433MHz to 470MHz. It has a max input power of 12dBm and VSWR of 5, suitable for RF applications requiring high power amplification in the frequency range. The component is designed for surface mount installation in various electronic systems.

Analog Devices' HMC8410LP2FE is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.

NXP Semiconductors' BGU6102,147 is a wide band low power RF amplifier with 6 terminals and operates on 3V supply. With a max operating temperature of 85°C, it is ideal for surface mount applications in RF and microwave systems.

HMC463LP5ETR by Analog Devices is a wide band low power RF amplifier with a gain of 8 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 18 dBm. This surface mount component is commonly used in RF and microwave applications.

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.

WIDE BAND HIGH POWER;

Analog Devices' MAX2630EUS+T is a wide band low power RF amplifier with 11dB gain, operating b/w 800-1000MHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for surface mount applications in RF & microwave systems. With a compact package and low supply current of 11mA at 3V, it's ideal for high-frequency signal amplification.

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;