NXP Semiconductors - OM2052

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Gain: 17 dB; Maximum Operating Frequency: 2800 MHz;

Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.

WIDE BAND LOW POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.

XF1001-SC-0G0T by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; JESD-609 Code: e3;

Broadcom's MSA-1105-TR1G is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. The component features surface mounting and operates at a supply voltage of 5.5V with a current draw of 70mA.

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 50 MHz;

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn) - annealed;

WIDE BAND LOW POWER; Minimum Operating Frequency: 10 MHz; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -55 Cel; Characteristic Impedance: 50 ohm;

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;

The Motorola MWA330 is a RF & Microwave Amplifier with max input power of 20 dBm and VSWR of 3. It operates in wide band low power applications from 0.1 MHz to 1000 MHz, making it ideal for various hybrid technology modules. With a metal package body, it can withstand temperatures from -25°C to 80°C.

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);