NXP Semiconductors - OM956/11

  1. Home
  2. NXP Semiconductors - OM956/11
OM956/11 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number OM956/11
Description WIDE BAND LOW POWER; Construction: MODULE; Minimum Operating Frequency: 950 MHz; Characteristic Impedance: 75 ohm; Maximum Operating Frequency: 2050 MHz; Maximum Voltage Standing Wave Ratio: 1.7;
Datasheet OM956/11 Datasheet
In Stock534
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 1.7
Construction: MODULE
Minimum Operating Frequency: 950 MHz
Characteristic Impedance: 75 ohm
Maximum Operating Frequency: 2050 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
534 - -

Popular Products

Category Top Products

BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
HMC3653LP3BE by Analog Devices

HMC3653LP3BE

Analog Devices

HMC3653LP3BE by Analog Devices is a wide band low power RF amplifier with a gain of 12 dB. It operates b/w 7-15 GHz, handling up to 12 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
CMPA1C1D080F by Wolfspeed

CMPA1C1D080F

Wolfspeed

NARROW BAND HIGH POWER;
TSS-53LNB3+ by Mini-circuits

TSS-53LNB3+

Mini-circuits

WIDE BAND LOW POWER;
RF6886SR by Qorvo

RF6886SR

Qorvo

Qorvo's RF6886SR is a wide band high power amplifier with 31 dB gain, operating from 433 MHz to 470 MHz. It has a max input power of 12 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in plastic/epoxy package.
MSA-1105-STR by Broadcom

MSA-1105-STR

Broadcom

Broadcom's MSA-1105-STR is a RF & Microwave Amplifier with 10 dB gain, 50 ohm impedance, and 1.7 max VSWR. Ideal for wideband low power applications from 50 MHz to 1300 MHz, it operates at 5.5V with a max input power of 13 dBm.
HMC659LC5 by Analog Devices

HMC659LC5

Analog Devices

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.
TQP7M9105 by Qorvo

TQP7M9105

Qorvo

Qorvo's TQP7M9105 RF amplifier offers 19.4 dB gain with a wide band of 50-1500 MHz, handling up to 30 dBm CW input power. Ideal for applications requiring high-performance RF amplification in environments ranging from -40°C to 85°C.
TQL9063 by Qorvo

TQL9063

Qorvo

TQL9063 by Qorvo is a wide band medium power RF amplifier with 17.5 dB gain, operating from 500 MHz to 4000 MHz. It has a max input power of 22 dBm and VSWR of 2.01, suitable for surface mount applications in RF & microwave systems.
NPA1003QAR by M/a-com Technology Solutions

NPA1003QAR

M/a-com Technology Solutions

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Power Supplies (V): 28;
MGA-86576-TR1G by Agilent Technologies

MGA-86576-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;
TQP7M9102-PCB2140 by Qorvo

TQP7M9102-PCB2140

Qorvo

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
TQP7M9106 by Triquint Semiconductor

TQP7M9106

Triquint Semiconductor

WIDE BAND HIGH POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1500 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm; Gain: 19 dB;
MGA-53543-BLKG by Agilent Technologies

MGA-53543-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Additional Features: LOW NOISE;
M57710-A by Mitsubishi Electric

M57710-A

Mitsubishi Electric

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.
HMC506LP4E by Analog Devices

HMC506LP4E

Analog Devices

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.
HMC6981LS6 by Hittite Microwave

HMC6981LS6

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;
HMC475ST89E by Hittite Microwave

HMC475ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;
ADL5541ACPZ-R7 by Analog Devices

ADL5541ACPZ-R7

Analog Devices

ADL5541ACPZ-R7 by Analog Devices is a wideband medium power RF amplifier with 14.3 dB gain, operating from 50 MHz to 6 GHz. It can handle up to 10 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for RF and microwave applications requiring high performance in temperature range -40°C to +85°C.