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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PBRN113ZT |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 300; Package Shape: RECTANGULAR; |
| Datasheet | PBRN113ZT Datasheet |
| In Stock | 2,275 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .8 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 300 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| Peak Reflow Temperature (C): | 260 |
