NXP Semiconductors - PBRP123YTT/R

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PBRP123YTT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PBRP123YTT/R
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .57 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet PBRP123YTT/R Datasheet
In Stock2,062
NAME DESCRIPTION
Maximum Collector Current (IC): .6 A
Maximum Power Dissipation (Abs): .57 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 190
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